WebBipolar Transistors. S.K. Kurinec, in Encyclopedia of Materials: Science and Technology, 2001 10.1 Polysilicon Bipolar Transistors. The parasitic capacitance has been dramatically reduced for improved performance by incorporating polysilicon into bipolar technology (Nakamura and Nishizawa 1995).The polysilicon layer is used as a diffusion source to … WebSep 1, 2012 · Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion …
Parasitic bipolar gain in fully depleted n-channel SOI MOSFET
WebOct 2, 2000 · The parasitic bipolar transistor of NMOS/SOI transistors is a key element to determine the single-event upset (SEU) sensitivity. Parasitic bipolar transistor response has been investigated through… Expand 37 View 2 excerpts, cites methods Practical considerations in the design of SRAM cells on SOI WebJun 11, 2024 · [2] Parasitic bipolar action: A phenomenon observed during HBM tests; when positive voltage is applied to the LDMOS drain, impact-ionization occurs at the PN junction. The drain/body/source works as a collector/base/emitter of the parasitic bipolar transistor, and collector current flows. ipic south street seaport
Bipolar Transistors in Logic CMOS Processes SpringerLink
WebBoth P and M - 1 are parasitic lateral bipolar device is inversely proportional to the dependent on bias conditions and technological parameters. concentration of holes in the body region. An expression for the proportionality constant is found and shown, by compar- Manuscript received July 19, 1993; revised November 16, 1993. Webfrom parasitic bipolar transistors. SCR gate current injection parasitic can occur in p-well or n-well technology. Voltage mode: When the power supply is increased above the nominal value, the SCR formed from parasitic bipolar transistors can be triggered. 5 SCR d e Current or V DD SCR V Anode VDD < V Anode WebSep 8, 2024 · Embodiments of the present application relate to the technical field of semiconductors, and provide a semiconductor structure and a preparation method therefor, and a radio frequency circuit, aiming to provide a SiGe HBT device structure having a relatively simple process and great potential to achieve high performance. The … orangetheory fitness barcelona